| 1. | Zinc oxide ( zno ) is a wide band - gap semiconductor , 3 . 37 ev at room temperature , with the high exciton binding energy of 60 mev
Zno是一种宽带隙半导体材料,室温下它的能隙宽度为3 . 37ev ,激子束缚能高达60mev 。 |
| 2. | Using a simple variation - fitting method ， the exciton binding energies of a sawtooth - shaped quantum well are calculated as a function of an electric field ， and the explanation of the results is also given
采用一种变分拟合的简单方法计算了电场下锯齿型多量子阱的激子结合能，对计算结果给出了合理的解释 |
| 3. | Dongxu zhao ( condensed matter physics ) directed by prof . dezhen shen and prof . yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3 . 37 ev at room temperature ) with the high exciton binding energy of 60 mev
<中文摘要> = zno是一种宽带隙的半导体材料，室温下它的能隙宽度为3 . 37ev ，激子束缚能高达60mev 。 |
| 4. | In low - dimension structure , the exciton binding energy will be lager than bulk material because of quantum effects , so excitons play an important role in optical characteristics of low - dimension zno
在低维结构中，由于量子限制效应，激子束缚能会变得更大，因而在低维zno材料中，激子发光在其光学特性中起着举足轻重的作用。 |
| 5. | Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices
由于氧化锌具有较高的激子束缚能( 60mev ) ，保证了其在室温下较强的激子发光，因而被认为是制作紫外半导体激光器的合适材料。 |
| 6. | Zinc oxide ( zno ) is an important wide band gap ( eg = 3 . 37ev ) semiconductor materials , its exciton binding energy is 60mev . these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature
氧化锌( zno )是一种重要的宽禁带( eg = 3 . 37ev )半导体材料,其激子束缚能高达60mev ,在室温紫外光电器件方面有巨大的应用潜力。 |
| 7. | This direct band - gap material has a large exciton binding energy ( 60mev ) , which permits excitonic recombination even at room temperature . thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions
它有较高的激子束缚能（常温下为60mev ） ，使得其在室温下可以发射紫外激光，因此作为新一代的半导体发光材料受到广泛关注。 |
| 8. | We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900 . the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900 , suggesting that the film quality can be improved by annealing process
当退火温度为900时获得了高质量的氧化锌薄膜，光致发光谱的半高宽为94mev ，通过变温实验得到激子束缚能为59mev ，表明退火过程提高了薄膜的质量。 |
| 9. | It has high exciton binding energy of 60 mev , which ensures efficient uv emission from the exciton and make it suitable for uv laser - emitting devices . since the first observation of the stimulated ultraviolet emission at room temperature , zno has become another hotspot in the region of uv light emitting researching
Zno不仅是继gan之后紫外发射材料研究的又一研究热点，而且近年来zno薄膜作为ito薄膜的很有发展前景的替代材料，正引起人们日益广泛的关注。 |
| 10. | Zno film is a novel - direct compound semiconductor with wide band gap energy of 3 . 37ev and a exciton binding energy 60mev at room temperature . due to its the prerequisite for visible or ultraviolet light emission at room temperature , it has the tremendous potential applications for ultraviolet detectors , leds , lds . zno thin film is used widely and effectively in the fields of surface acoustic wave devices , solar cell , gas sensors , varistors and so on because of its excellent piezoelectrical performance
室温下禁带宽度为3 . 37ev ，激子束缚能为60mev ，具备了室温下发射紫外光的必要条件，在紫外探测器、 led 、 ld等领域有着巨大的发展潜力； zno薄膜以其优良的压电性能、透明导电性能等使其在太阳能电池、压电器件、表面声波器件、气敏元件等诸多领域得到广泛应用。 |
